View BLF6G22LS-180RN_3911959.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product pro?le 1.1 general description 180 w ldmos power transistor for base station applications at frequencies from 2000 mhz to 2200 mhz. [1] test signal: 3gpp; test model 1; 64 dpch; par = 7 db at 0.01 % probability on ccdf per carrier; carrier spacing 10 mhz. 1.2 features n typical 2-carrier w-cdma performance at frequencies of 2110 mhz and 2170 mhz, a supply voltage of 30 v and an i dq of 1400 ma: u average output power = 40 w u power gain = 16.0 db u ef?ciency = 25 % u imd3 = - 38 dbc u acpr = - 42 dbc n easy power control n integrated esd protection n enhanced ruggedness n high ef?ciency n excellent thermal stability n designed for broadband operation (2000 mhz to 2200 mhz) n internally matched for ease of use blf6g22-180rn; BLF6G22LS-180RN power ldmos transistor rev. 01 20 november 2008 product data sheet table 1. typical performance typical rf performance at t case = 25 c in a class-ab production test circuit. mode of operation f v ds p l(av) g p h d imd3 acpr (mhz) (v) (w) (db) (%) (dbc) (dbc) 2-carrier w-cdma 2110 to 2170 30 40 16.0 25 - 38 [1] - 42 [1] caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
blf6g22-180rn_22ls-180rn_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 20 november 2008 2 of 11 nxp semiconductors blf6g22(ls)-180rn power ldmos transistor n compliant to directive 2002/95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications n rf power ampli?ers for gsm, gsm edge, w-cdma and cdma base stations and multi carrier applications in the 2000 mhz to 2200 mhz frequency range 2. pinning information [1] connected to ?ange. 3. ordering information 4. limiting values table 2. pinning pin description simpli?ed outline graphic symbol blf6g22-180rn (sot502a) 1 drain 2 gate 3 source [1] BLF6G22LS-180RN (sot502b) 1 drain 2 gate 3 source [1] 3 2 1 sym112 1 3 2 3 2 1 sym112 1 3 2 table 3. ordering information type number package name description version blf6g22-180rn - ?anged ldmost ceramic package; 2 mounting holes; 2 leads sot502a BLF6G22LS-180RN - earless ?anged ldmost ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage - 0.5 +13 v i d drain current - 49 a t stg storage temperature - 65 +150 c t j junction temperature - 225 c
blf6g22-180rn_22ls-180rn_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 20 november 2008 3 of 11 nxp semiconductors blf6g22(ls)-180rn power ldmos transistor 5. thermal characteristics 6. characteristics 7. application information 7.1 ruggedness in class-ab operation the blf6g22-180rn and BLF6G22LS-180RN are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds = 30 v; i dq = 1400 ma; p l = 180 w (cw); f = 2170 mhz. table 5. thermal characteristics symbol parameter conditions type typ unit r th(j-case) thermal resistance from junction to case t case =80 c; p l =40w blf6g22-180rn 0.50 k/w BLF6G22LS-180RN 0.37 k/w table 6. characteristics t j = 25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 0.9 ma 65 - - v v gs(th) gate-source threshold voltage v ds =10v;i d = 270 ma 1.4 2.0 2.4 v v gsq gate-source quiescent voltage v ds = 28 v; i d = 1.62 a 1.5 2.0 2.5 v i dss drain leakage current v gs =0v; v ds =28v - - 5 m a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 40 45 - a i gss gate leakage current v gs = 13 v; v ds = 0 v - - 450 na g fs forward transconductance v ds =10v; i d = 13.5 a - 19.5 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 9.45 a - 0.06 - w c rs feedback capacitance v gs =0v; v ds =30v; f= 1mhz - 3.3 - pf table 7. application information mode of operation: 2-carrier w-cdma; par = 7 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1-64 pdpch; f 1 = 2112.5 mhz; f 2 = 2122.5 mhz; f 3 = 2157.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds =30v; i dq = 1400 ma; t case =25 c; unless otherwise speci?ed; in a class-ab production test circuit. symbol parameter conditions min typ max unit p l(av) average output power - 40 - w g p power gain p l(av) = 40 w 15.0 16.0 - db rl in input return loss p l(av) =40w - - 11 - 8db h d drain ef?ciency p l(av) =40w 22 25 - % imd3 third order intermodulation distortion p l(av) =40w - - 38 - 34.5 dbc acpr adjacent channel power ratio p l(av) =40w - - 42 - 39 dbc
blf6g22-180rn_22ls-180rn_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 20 november 2008 4 of 11 nxp semiconductors blf6g22(ls)-180rn power ldmos transistor 7.2 one-tone cw 7.3 two-tone cw v ds = 30 v; i dq = 1400 ma; f = 2140 mhz. fig 1. one-tone cw power gain and drain ef?ciency as function of load power; typical values p l (w) 0 180 120 60 001aai641 15 16 17 g p (db) 14 20 40 60 h d (%) 0 g p h d v ds = 30 v; i dq = 1400 ma; f = 2140 mhz. v ds = 30 v; i dq = 1400 ma; f = 2140 mhz. fig 2. two-tone cw power gain and drain ef?ciency as function of peak envelope load power; typical values fig 3. two-tone cw intermodulation distortion as a function of peak envelope load power; typical values p l(pep) (w) 0 180 120 60 001aai642 15 16 17 g p (db) 14 20 40 60 h d (%) 0 g p h d p l(pep) (w) 0 100 80 40 60 20 001aai643 - 50 - 40 - 60 - 30 - 20 imd (dbc) - 70 imd3 imd5 imd7
blf6g22-180rn_22ls-180rn_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 20 november 2008 5 of 11 nxp semiconductors blf6g22(ls)-180rn power ldmos transistor 7.4 2-carrier w-cdma 8. test information v ds = 30 v; i dq = 1400 ma; f = 2140 mhz ( 5 mhz); carrier spacing 10 mhz. v ds = 30 v; i dq = 1400 ma; f = 2140 mhz ( 5 mhz); carrier spacing 10 mhz. fig 4. 2-carrier w-cdma power gain and drain ef?ciency as function of average load power; typical values fig 5. 2-carrier w-cdma adjacent channel power ratio and third order intermodulation distortion as function of average load power; typical values p l(av) (w) 060 40 20 001aai644 15 16 17 g p (db) 14 20 40 60 h d (%) 0 g p h d 001aai645 p l(av) (w) 060 40 20 - 45 - 40 - 50 - 35 - 30 imd3 acpr (dbc) - 55 imd3 acpr the drawing is not to scale. fig 6. test circuit for operation at 2200 mhz 001aai646 c13 c10 c11 c14 c15 c16 c12 c17 c18 c19 c3 c7 c20 c8 c2 c1 c6 r2 r1 c5 c4 c9 v gg input v dd output
blf6g22-180rn_22ls-180rn_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 20 november 2008 6 of 11 nxp semiconductors blf6g22(ls)-180rn power ldmos transistor [1] solder vertically. the striplines are on a double copper-clad taconic rf35 printed-circuit board (pcb) with e r = 3.5 and thickness = 0.76 mm. see t ab le 8 for list of components. the drawing is not to scale. fig 7. component layout 001aai647 c1 c7 c8 r2 c6 c5 c4 c3 r1 c2 c9 c10 c11 c12 c13 c14 c16 c15 c20 c17 c18 c19 table 8. list of components (see figure 6 and figure 7 ) the printed-circuit board (pcb) used is a double copper-clad taconic rf35 with e r = 3.5 and thickness = 0.76 mm. component description value remarks c1, c3, c12, c13 multilayer ceramic chip capacitor 13 pf [1] atc 100b or capacitor of same quality c2 multilayer ceramic chip capacitor 1.4 pf [1] atc 100b or capacitor of same quality c4, c5, c14, c17 multilayer ceramic chip capacitor 220 nf vishay or capacitor of same quality c6, c7 multilayer ceramic chip capacitor 100 nf vishay or capacitor of same quality c8 multilayer ceramic chip capacitor 10 m f c9 multilayer ceramic chip capacitor 12 pf [1] atc 100b or capacitor of same quality c10 multilayer ceramic chip capacitor 1.1 pf [1] atc 100b or capacitor of same quality c11 multilayer ceramic chip capacitor 0.7 pf [1] atc 100b or capacitor of same quality c15, c18 multilayer ceramic chip capacitor 1.5 m f c16, c19 multilayer ceramic chip capacitor 10 m f; 50 v tdk or capacitor of same quality c20 electrolytic capacitor 220 m f; 63 v l1 ferrite smd bead - ferroxcube bds 3/3/4.6-4s2 or equivalent r1 smd resistor 2.7 w r2, r3 smd resistor 6.8 w
blf6g22-180rn_22ls-180rn_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 20 november 2008 7 of 11 nxp semiconductors blf6g22(ls)-180rn power ldmos transistor 9. package outline fig 8. package outline sot502a references outline version european projection issue date iec jedec jeita sot502a 99-12-28 03-01-10 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502a p l a f b d u 2 h q c 1 3 2 d 1 e a c q u 1 c b e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 0.51 27.94 qw 2 w 1 f 1.14 0.89 u 1 34.16 33.91 l 5.33 4.32 p 3.38 3.12 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.01 0.02 1.100 0.045 0.035 1.345 1.335 0.210 0.170 0.133 0.123 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions) w 1 ab m m m
blf6g22-180rn_22ls-180rn_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 20 november 2008 8 of 11 nxp semiconductors blf6g22(ls)-180rn power ldmos transistor fig 9. package outline sot502b references outline version european projection issue date iec jedec jeita sot502b 03-01-10 07-05-09 0 5 10 mm scale earless flanged ldmost ceramic package; 2 leads sot502b a f b d u 2 l h q c 1 3 2 d 1 e d u 1 d e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 w 2 f 1.14 0.89 u 1 20.70 20.45 l 5.33 4.32 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.010 0.045 0.035 0.815 0.805 0.210 0.170 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions)
blf6g22-180rn_22ls-180rn_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 20 november 2008 9 of 11 nxp semiconductors blf6g22(ls)-180rn power ldmos transistor 10. abbreviations 11. revision history table 9. abbreviations acronym description 3gpp third generation partnership project ccdf complementary cumulative distribution function cdma code division multiple access cw continuous wave dpch dedicated physical channel edge enhanced data rates for gsm evolution gsm global system for mobile communications ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor par peak-to-average power ratio pdpch transmission power of the dedicated physical channel rf radio frequency vswr voltage standing-wave ratio w-cdma wideband code division multiple access table 10. revision history document id release date data sheet status change notice supersedes blf6g22-180rn_22ls-180rn_1 20081120 product data sheet - -
blf6g22-180rn_22ls-180rn_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 20 november 2008 10 of 11 nxp semiconductors blf6g22(ls)-180rn power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors blf6g22(ls)-180rn power ldmos transistor ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 20 november 2008 document identifier: blf6g22-180rn_22ls-180rn_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation. . . . . . . . . . 3 7.2 one-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.3 two-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.4 2-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 10 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13 contact information. . . . . . . . . . . . . . . . . . . . . 10 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

▲Up To Search▲

Price & Availability of BLF6G22LS-180RN

	To Download BLF6G22LS-180RN Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .